A T Collins and S Rafique 1978 J. Phys. C: Solid State Phys. 11 1375 doi:10.1088/0022-3719/11/7/027
Photocapacity measurements on natural semiconducting diamond
A T Collins and S Rafique
Show affiliationsPhotocapacity spectra have been obtained for Schottky barriers on natural semiconducting diamond using photon energies between 0.8 and 4.0 eV. The results indicate the presence of a deep level approximately 1.4 eV above the valence band. In reaching this conclusion independent evidence regarding the donor nature of this level has been used, and it has been assumed that electrons are excited from the valence band to ionised donors in the depletion layer in a two-step process via ionised acceptors. This is the reverse process to donor-acceptor pair recombination.
- PACS
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72.40.+w Photoconduction and photovoltaic effects
73.30.+y Surface double layers, Schottky barriers, and work functions
- Subjects
- Dates
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Issue 7 (14 April 1978)
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Photocapacity measurements on natural semiconducting diamond
A T Collins and S Rafique 1978 J. Phys. C: Solid State Phys. 11 1375
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