Quick search Find article
Quick search
Find article

Influence of stacking disorder on Wannier excitons in layered semiconductors

J J Forney, K Maschke and E Mooser

Show affiliations


The influence of stacking disorder on Wannier excitons in layered semiconductors is discussed. In particular it is found that in the presence of stacking disorder the excitons are confined to a finite number of layers. The experimental results are discussed for GaSe. In this case the absorption spectra turn out to be strongly sample dependent. In general they show a pronounced fine structure near the exciton groundstate energy, which can be understood as a consequence of the disorder-induced localization of the excitons. The variety of absorption spectra observed in GaSe can be related to the different stacking orders occurring in this material.


PACS

61.72.Nn Stacking faults and other planar or extended defects

71.35.Cc Intrinsic properties of excitons; optical absorption spectra

78.40.Fy Semiconductors

61.72.Bb Theories and models of crystal defects

71.70.-d Level splitting and interactions

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Condensed matter: structural, mechanical & thermal

Dates

Issue 11 (14 June 1977)



View by subject




Export








Please login to access our web services, or create an account if you don't yet have one.

You must have cookies enabled in your web browser to be able to login.

Username
Password

Forgotten your password? Get a new one here.